Semiconductor device and method of manufacturing semiconductor device

ABSTRACT

The semiconductor device includes; a semiconductor element in which a metallization layer is formed on the backside side; a metallic lead frame that is arranged in parallel, with a distance spaced apart from the semiconductor element; a first bonding layer that is provided between the semiconductor element and the lead frame, and is bonded to the metallization layer; and a second bonding layer that is provided between the semiconductor element and the lead frame, and bonds the first bonding layer to the lead frame. The first bonding layer is expanded at a central portion toward the lead frame.

TECHNICAL FIELD

The present invention relates to semiconductor devices characterized bydie bonding.

BACKGROUND ART

Power modules have been used in all scenes from power generation andpower transmission to effective use and regeneration of energy. Inmanufacturing such a semiconductor device, first, a silicon wafer formedwith circuits is finely cut to form silicon (Si) chips (integratedcircuit (IC) chips). This cut state is referred to as dice. The die isfixed at a predetermined position of a lead frame. This process isreferred to as die bonding.

In semiconductor elements including power modules, miniaturization hasbeen being advanced. In proportion as heat generation density increases,the quality of a die bonding portion (the presence or absence of a voidand/or an unbonded portion) gives a large influence on heat dissipationproperties. Hereafter, it is conceivable that a reduction in thicknessof the IC chip will be advanced for higher efficiency. Diffusion of heatby the semiconductor element itself is difficult; and thus, it isconceivable that the quality of the die bonding portion gives aremarkable influence by the heat dissipation properties.

In order to suppress the occurrence of the void and/or the unbondedportion in the die bonding, an expensive system such as a vacuumsoldering system is used. A process such as performing scrub, which islarge in the number of processes, is also used; however, the occurrenceof the void is not basically solved. In a high-performance siliconcarbide (SiC) semiconductor, securement of the heat dissipationproperties at the die bonding portion will be more important than everbefore due to becoming high in operating temperature.

Patent Document 1 proposes a method in which the bottom of a heat sinkis processed into a pyramid shape to facilitate the escape of a voidduring soldering. Machining of the backside (die bonding surface) isdifficult to perform with respect to a fragile Si chip with a thicknessof 100 μm, and processing strain gives an influence on reliability evenwhen the machining can be performed.

Patent Document 2 proposes a method in which solder is once pressed toexpand to 50 to 90% of a bonding area and then the solder is made tomelt to perform die bonding. As long as the total amount of soldermaterial serving as bonding material is melted like the method disclosedin this document, the occurrence of a large void is unavoidable evenwhen scrub is performed.

Patent Document 3 proposes a method in which pads divided by slits areformed on a bonding surface and high temperature solder is suppliedthereto respectively. A slit portion is completely an unbonded portion.In the case where heat generation is large and diffusion of the heatcannot be expected due to a reduction in thickness of a chip, the slitportion causes thermal damage.

PRIOR ART DOCUMENT Patent Document

-   Patent Document 1: Japanese Unexamined Patent Publication No.    H07-297329-   Patent Document 2: Japanese Unexamined Patent Publication No.    2006-114649-   Patent Document 3: Japanese Unexamined Patent Publication No.    2003-068930

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

The power modules have become popular in all products fromtransportation and industrial equipment to home appliances andinformation terminals. More particularly, the power modules mounted onhome appliances such as an air conditioner are required to achieve notonly long-term reliability but also miniaturization and higherefficiency. The SiC semiconductors are expected to be the mainstream offuture power modules in a point, which is high in operating temperatureand superior in efficiency. Thus, the development of packageconfigurations that are also applicable to the SiC semiconductors isrequired.

The present invention has been made to solve these problems, and anobject of the present invention is to increase reliability of a diebonding portion in a semiconductor device including a power module.

Means for Solving the Problems

According to the present application, there is provided a semiconductordevice including: a semiconductor element in which a metallization layeris formed on the backside side; a metallic lead frame that is arrangedin parallel, with a distance spaced apart from the semiconductorelement; a first bonding layer that is provided between thesemiconductor element and the lead frame, and is bonded to themetallization layer; and a second bonding layer that is provided betweenthe semiconductor element and the lead frame, and bonds the firstbonding layer to the lead frame. The first bonding layer is expanded ata central portion toward the lead frame.

Advantageous Effect of the Invention

By a convex portion formed in the bonding portion, the nearer to anouter edge a die bonding portion is, the larger the thickness is,whereby a void generated in bonding material is positively eliminated tothe outside. As a result, reliability of die bonding is increased.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration view showing a semiconductor deviceaccording to the present invention;

FIG. 2 is a conceptual view showing an initial process of a die bondingprocess according to Embodiment 1;

FIG. 3 is a conceptual view showing a subsequent process of the diebonding process according to Embodiment 1;

FIG. 4 is a conceptual view showing a finished product of the diebonding process according to Embodiment 1;

FIG. 5 is a conceptual view showing a void generated in a die bondingportion;

FIG. 6 is a conceptual view showing an initial process of a die bondingprocess according to Embodiment 2;

FIG. 7 is a conceptual view showing a finished product of the diebonding process according to Embodiment 2;

FIG. 8 is a conceptual view showing an initial process of a die bondingprocess according to Embodiment 3;

FIG. 9 is a conceptual view showing a finished product of the diebonding process according to Embodiment 3;

FIG. 10 is a conceptual view showing an initial process of a die bondingprocess according to Embodiment 4; and

FIG. 11 is a conceptual view showing a finished product of the diebonding process according to Embodiment 4.

MODE FOR CARRYING OUT THE INVENTION Embodiment 1

The whole configuration of a semiconductor device 100 referred to astransfer power mold (T-PM) is shown in FIG. 1. The semiconductor device100 includes: a lead frame 4; a power element 11; a bonding wire 12; acontrol element 13; an external lead 14; a molding resin 15; a heat sink16; and the like. The lead frame 4, the power elements 11, the bondingwires 12, the control element 13, the heat sink 16 are resin-sealed witha molding resin 15. The lead frame after completion of bonding is set ina metal mold and thermosetting resin is poured to form the package typesemiconductor device 100.

The process of die bonding, by which a semiconductor element such as thepower element 11 is bonded to the lead frame 4, will be described byusing FIG. 2 to FIG. 11. The power element 11 and the control element 13may be formed by a wide band gap semiconductor that is larger in bandgap than silicon (Si), in addition to by a semiconductor formed bysilicon. As the wide band gap semiconductor, there exist, for example,silicon carbide (SiC), gallium nitride-based material, and diamond. Inthe case of using the wide band gap semiconductor, permissible currentdensity is high and power loss is also low; and therefore,miniaturization of a device using a power semiconductor element can beachieved.

FIG. 2 to FIG. 4 are conceptual views each showing the die bondingprocess of the semiconductor element according to Embodiment 1. In FIG.2, a chip of a size of 6 mm×6 mm is used for an Si chip 1. Ametallization layer 2 is formed on the backside of the Si chip 1 with athickness of 0.2 mm and a wire bonding electrode 8 is formed on thesurface thereof. The composition of the metallization layer 2 isaluminum (Al), nickel (Ni), and gold (Au). Solder paste of hightemperature solder (melting point: 240° C.) serving as bonding materialis printed and supplied on the surface of the metallization layer 2 byusing a printing mask (opening portion: 5 mm×5 mm, thickness: 0.3 mm),with the surface of the Si chip 1 facing downward; and the solder pasteis made to melt by a hot plate heated to 260° C. The solder paste is onein which solder powder and flux are kneaded. As a result, a convexbonding layer 3 is formed on the backside of the Si chip 1. Thecomposition of the convex bonding layer 3 is 95% tin (Sn) and 5%antimony (Sb). The convex bonding layer 3 has a gradual convex shapewith a thickness of approximately 0.2 mm at a central portion.

Next, as shown in FIG. 3, the metallic lead frame 4 is prepared. In thiscase, a copper (Cu) plate having a size of 10 mm×10 mm with a thicknessof 0.6 mm is used for the lead frame 4. Solder paste 5 of lowtemperature solder (melting point: 217° C.) serving as bonding materialis printed and supplied on the lead frame 4 by using the printing mask(opening portion: 5 mm×5 mm, thickness: 0.3 mm); and then, the Si chip 1is mounted on the lead frame 4, with the convex bonding layer 3 facingdownward. Solder paste with a particle diameter of 15 to 25 μm and aflux content of 10 wt % is used for the solder paste 5. The compositionof the low temperature solder is 96.5% Sn, 3% silver (Ag), and 0.5%.

Finally, the solder paste 5 of the low temperature solder is made tomelt by the hot plate heated to 240° C. to form a concave bonding layer6 (see FIG. 4). Even when the low temperature solder is in a meltedstate, the convex bonding layer 3 maintains a solid state. Morespecifically, the solidus temperature of the convex bonding layer 3 ishigher than solidus temperature of the concave bonding layer 6. The Sichip 1 is bonded to the lead frame 4 by this process. After that, thelead frame 4 is mounted on the heat sink 16; and the wire bondingelectrode 8 of the Si chip 1 is connected to the external lead 14 andthe like by a gold wire. The Si chip 1 in which wire bonding isperformed is mold-formed with the molding resin 15.

An evaporation component in the flux of the solder paste 5 is gasifiedto become an air bubble during the heating. Liquid (melted solder) thatis present in the concave bonding layer 6 increases as the thickness ofthe concave bonding layer 6 is nearer to an outer edge; and therefore,the air bubble is positively eliminated to the outside. This is becausethat the air bubble in the liquid tries to be a state where a surfacearea becomes as small as possible due to surface tension. If the airbubble is the same volume, the air bubble changes to a state where theshape thereof becomes spherical as nearly as possible; and as a result,driving force, which moves to an outer edge portion where the thicknessof the liquid is large, is acted on the air bubble. Even if the airbubble (void) remains in the concave bonding layer 6, the void is almosta spherical void 71 (see FIG. 5) formed near the outer edge portion. Thespherical void 71 is sufficiently smaller in diameter than the thicknessof the concave bonding layer 6; and therefore, an influence on heatdissipation properties is minute as compared to a columnar void that isalmost the same height as the thickness of a bonding portion.

The convex bonding layer 3 shown in FIG. 5 has a flat portion 74 with adiameter of 0.8 mm in the center. The flat portion 74 is formed byperforming press working on an apex portion of the convex bonding layer3. The central portion of the convex bonding layer 3 is flattened into acircular form; and thus, a gradient during a mounting of thesemiconductor element can be suppressed. If the gradient is generatedduring the bonding, there is a concern that, for example, there existsthe occurrence of a crack due to thermal stress at a portion where theheight of the bonding portion is small; however, the occurrence of thiscrack is suppressed.

As shown in FIG. 5, it is assumed that there remains a flat void 72 nearthe apex of the convex bonding layer 3. The flat void 72 is distantlyseparated not only by the thickness (0.2 mm) of the chip itself but alsoby the thickness (0.2 mm) of the convex bonding layer 3 from theoutermost surface where the heat generation of the Si chip 1 is thelargest. The heat generation can be expected to be sufficiently expandedbefore reaching there; and therefore, it is conceivable that theinfluence of the void 72 is small. It can be expected that the thinnerthe chip thickness is, the larger the effect is.

Even when the convex of the convex bonding layer 3 is in a sphericalshape at only near the center and the outer edge portion is a flat andlow portion, similar effects can be obtained if a large void can beeliminated from a center portion whose temperature becomes the highest.Furthermore, if a convex portion is formed by machining on the leadframe side on which the Si chip is mounted and a gradient can be made onthe bonding portion together with the convex portion of the Si chip, afurther effect is obtained.

If the size of the flat portion 74 is equal to or higher than 5% of thewhole bonding area, the gradient can be suppressed. If the size of theflat portion is equal to or higher than 50% of the whole bonding area,driving force that eliminates a void to the outside is difficult toobtain. Even when a void whose area is the same as the flat portion isgenerated, if the heat is spread at 45 degrees and if the void is lessthan or equal to a diameter of 0.8 mm that is double of 0.4 mm, which issummed up by the thickness (0.2 mm) of the Si chip and the thickness(0.2 mm) of the convex bonding layer 3, thermal influence can be almostnegligible and thus the dimension of the flat portion is recommended tobe less than or equal to this diameter.

According to the present application, the high temperature solder isused, whereby the formation of the convex portion is facilitated bysurface tension due to melted metal. The melting point is higher thanthat of metal to be used for bonding, whereby a state, in which thenearer to the outer edge the die bonding portion is, the thicker thethickness thereof is, is facilitated to secure during the heating timefor bonding. In the case of previously supplying the high temperaturesolder, the solder is melted in an opened state; and therefore, a voidwith a diameter exceeding the thickness thereof is not generated inprinciple. The high temperature solder is not melted during the bondingand a void generated in the melted low temperature solder is eliminatedtoward the outer edge portion where a gap is wide.

Incidentally, the solder paste of the high temperature solder is used inthis case; however, even when solder or metal of desired composition issupplied by plating, evaporation, dipping by immersion, or the like,similar effects can be obtained. Furthermore, after supplying metal, forexample, remelting is made to be a convex state; and thus, similareffects can be obtained. In this case, the SnSb solder serving as thehigh temperature solder and the SnAgCu solder serving as the lowtemperature solder are used. However, as long as solder with differentmelting points are combined, similar effects can be obtained even whenusing the compositions of: Sn, Ag, and Cu (melting point: 217° C.); Snand bismuth (Bi) (melting point: 140° C.), Au and Sn (melting point:280° C.); Sn and Sb (melting point: 240° C.), and the like.

Bonding material made of low melting point metal powder in which highmelting point metal powder is dispersed, for example, A-FAP of AsahiKasei E-Materials Co., can be used. If this bonding material is onceheated and aggregated, remelting is not made even when heated to thesame temperature; and therefore, similar effects can be obtained evenwhen the bonding material to be used for forming the convex portion isthe same as the bonding material to be used for bonding. Bondingmaterial with higher ratio of the high melting point metal powder isused as the high temperature solder; and as the low temperature solder,bonding material with the same or lower ratio of the high melting pointmetal powder or bonding material without containing the high meltingpoint metal is used; and thus, similar effects can be obtained. Bondingmaterial, in which the high melting point metal powder and the lowmelting point metal powder are dispersed, is bonding material in whichcohesive force is low due to small liquid components and the occurrenceof a void is unavoidable in a closed bonding portion. According toEmbodiment 1, the convex is formed in the opened state; and therefore,even when the bonding material, which is made of the low melting pointmetal powder in which the high melting point metal powder is dispersed,is used, the occurrence of a large void is practically nought. Bondingis made by using bonding material which contains a relatively small voidand small high melting point metal powder; and thus, the formation of avoid with a thickness comparable to the thickness of the bonding portionis suppressed and heat dissipation properties can be secured.

Embodiment 2

FIG. 6 and FIG. 7 are conceptual views each showing a die bondingprocess of a semiconductor element according to Embodiment 2. InEmbodiment 2, as shown in FIG. 6, an aluminum jig 9 is used, thealuminum jig having opening portions 91 and an opening portion 92, eachbeing shaped in a quadrangular pyramid. Solder paste of high temperaturesolder is filled in the opening portions 91, 92; and an Si chip 1 ismounted on the aluminum jig 9, with a metallization layer 2 facingdownward. The solder paste of the high temperature solder filled in theopening portions 91, 92 is made to melt to transfer the high temperaturesolder on the metallization layer 2. Next, solder paste of lowtemperature solder is printed and supplied on a lead frame 4 by using aprinting mask (opening portion; 5 mm×5 nm, thickness: 0.3 mm); and theSi chip 1 is mounted on the lead frame 4, with convex bonding layers 31,32 facing downward.

Finally, solder paste 5 of the low temperature solder is made to melt bya hot plate heated to 240° C. to form a concave bonding layer 6 (seeFIG. 7). The convex bonding layer 31 with a smaller convex shape thanthe convex bonding layer 32 with a central larger convex shape is formedon the backside of the Si chip 1 corresponding to a wire bondingelectrode 8. The convex bonding layer 31 suppresses a void from beinglocally generated just beneath the wire bonding electrode.

If the void is present in a wire bonding portion, there is a concernthat a capillary and/or a tool used for wire bonding sticks and damagesthe semiconductor element. The semiconductor element is thinned and thusrigidity is lowered; and if the void is present just beneath the wirebonding electrode, it is also conceivable that the chip is fractured bythe shock of the wire bonding. The convex portions of the convex bondinglayers 3 are located on the backsides thereof; and thus, the void can beeliminated.

Embodiment 3

FIG. 8 and FIG. 9 are conceptual views each showing a die bondingprocess of a semiconductor element according to Embodiment 3. InEmbodiment 3, as shown in FIG. 8, an aluminum jig 9 is used, thealuminum jig having opening portions in which opening portions 91 and anopening portion 92, each being shaped in a quadrangular pyramid, arelinked. Solder paste of high temperature solder is filled in the openingportions 91, 92; and an Si chip 1 is mounted on the aluminum jig 9, witha metallization layer 2 facing downward. The solder paste of the hightemperature solder filled in the opening portions 91, 92 is made to meltto transfer the high temperature solder on the metallization layer 2.Next, solder paste of low temperature solder is printed and supplied byusing a printing mask (opening portion: 5 mm×5 mm, thickness: 0.3 mm);and the Si chip 1 is mounted on a lead frame 4, with convex bondinglayers 31, 32 facing downward.

Finally, solder paste of the low temperature solder is made to melt by ahot plate heated to 240° C. to form a concave bonding layer 6 (see FIG.9). The opening portions of the aluminum jig 9 are linked; and thus, theconvex bonding layer 31 of a small convex shape and the convex bondinglayer 32 of a central convex shape are linked. The metallization layer(Si chip electrode) 2 is not exposed during the formation of the concavebonding layer 6; and therefore, it is difficult to have an influence onheat dissipation properties even when a void is generated between theconvex portions.

Embodiment 4

FIG. 10 and FIG. 11 are conceptual views each showing a die bondingprocess of a semiconductor element according to Embodiment 4. InEmbodiment 4, as shown in FIG. 10, solder paste 5 of low temperaturesolder used for bonding is divided into 36 to be printed and supplied.The solder paste 5 is heated at a temperature at which the solder paste5 maintains the original shape and the solder paste 5 is bonded to aconvex bonding layer 3. A concave bonding layer 6 of the low temperaturesolder is formed in a divided state (see FIG. 11). Gaps 62 are remainedin the concave bonding layer 6; and thus, a bonding portion which ismore flexible and superior in temperature cycling property can beformed. At this time, liquid components in the solder paste of the lowtemperature solder are reduced and bonding material made of low meltingpoint metal powder in which high melting point metal powder is dispersedis used; and thus, a change in shape before and after bonding can besuppressed.

Incidentally, in this case, the convex bonding layer 3 is formed on theSi chip side; however, even when an enclosure that limits a wettingrange by a solder resist or the like is formed on the lead frame sideand a convex of high temperature solder is formed on the lead frame sideor both sides, similar effects can be obtained. Furthermore, the hightemperature solder is used for forming a convex state; however, similareffects can be obtained even when the convex state is formed, forexample, by using adhesive containing a metallic filler such as silver(Ag) paste and by pressing a die. A sphere is ideal for the convex ofthe convex bonding layer 3; however, even when a part of the apexthereof is flat, similar effects can be obtained if the height thereofis gradually reduced at near an outer edge portion.

When SiC is used for the Si chip 1, a semiconductor device 100 isoperated at a higher temperature than the case of using Si in order tomake use of the characteristics thereof. In a semiconductor device onwhich an SiC device is mounted, higher reliability is required as thesemiconductor device; and therefore, the merit of the present inventionwhich achieves a highly reliable semiconductor device becomes moreeffective.

Incidentally, the present invention can freely combine the respectiveembodiments and appropriately change or omit the respective embodiments,within the scope of the present invention.

DESCRIPTION OF REFERENCE NUMERALS

-   -   1 Si chip,    -   2 Metallization layer,    -   3 Convex bonding layer,    -   4 Lead frame,    -   5 Solder paste,    -   6 Concave bonding layer,    -   71 to 73 Void,    -   8 Wire bonding electrode,    -   9 Aluminum jig,    -   15 Molding resin,    -   31 Convex bonding layer,    -   32 Convex bonding layer,    -   62 Gap

1. A semiconductor device comprising: a semiconductor element in which ametallization layer is formed on the backside side; a metallic leadframe that is arranged in parallel, with a distance spaced apart fromsaid semiconductor element; a first bonding layer that is providedbetween said semiconductor element and said lead frame, and is bonded tosaid metallization layer; and a second bonding layer that is providedbetween said semiconductor element and said lead frame, and bonds saidfirst bonding layer to said lead frame, wherein said first bonding layeris expanded at a central portion toward said lead frame and is higher inmelting point than said second bonding layer.
 2. (canceled)
 3. Thesemiconductor device according to claim 1, wherein said semiconductorelement is formed with a wire bonding electrode on the surface side andsaid first bonding layer is expanded toward said lead frame at a portionthat is sandwiched between said wire bonding electrode and said leadframe.
 4. (canceled)
 5. The semiconductor device according to claim 1,wherein said first bonding layer is flattened at a top portion of theexpanded central portion.
 6. The semiconductor device according to claim1, wherein said second bonding layer is divided into a plurality ofsections by air gaps.
 7. The semiconductor device according to claim 1,wherein said semiconductor element is formed by a wide band gapsemiconductor.
 8. The semiconductor device according to claim 7, whereinsaid wide band gap semiconductor is any semiconductor of siliconcarbide, gallium nitride-based material, and diamond.
 9. A method ofmanufacturing a semiconductor device, comprising: a step of supplyingpaste-like first bonding material to a metallization layer formed on thebackside side of a semiconductor element; a step of heating saidsemiconductor element with said metallization layer, to which said firstbonding material is supplied, facing downward; a step of supplyingpaste-like second bonding material to a metallic lead frame; a step ofmounting said heated semiconductor element on said lead frame, to whichsaid second bonding material is supplied, with the backside side facingdownward; and a step of heating said semiconductor element mounted onsaid lead frame.
 10. The method of manufacturing a semiconductor deviceaccording to claim 9, wherein said first bonding material contains firstmetal powder, and said second bonding material contains second metalpowder that is lower in melting point than said first metal powder. 11.The method of manufacturing a semiconductor device according to claim 9,wherein said first bonding material contains low melting point metalpowder in which high melting point metal powder is dispersed.